Monolithic active-passive photonic integration

The monolithic integration of active materials providing optical gain and optical non-linearities is instrumental to increase the functionality of integrated photonic circuits. A double layer integration scheme has been experimentally demonstrated, exhibiting transition losses between the two materials of less than 0.2 dB. Furthermore, a single layer integration scheme is proposed, which decreases the number of process steps, reducing fabrication cost, and also decreasing the sensitivity to fabrication tolerances. In this paper, we will overview our recent developments on the monolithic integration of both, Al2O3 and TiO2 onto the passive Si3N4 and Al2O3 platforms for the development of on-chip amplifiers and lasers.