A Current Mirror-based Compensation Circuit for Multi-row Read in In-memory Computing

Multi-row read plays an important role in in-memory computing and its precision affects the accuracy of the calculation. In this brief Letter, a discharge compensation method is proposed for the linearisation of multi-row read operations in static RAM. Current mirrors are added to bitlines to compensate for the discharge voltage. With compensation, the integral non-linearity decreases by 72% compared with the situation without compensation. In addition, a wordline signal generation circuit based on replica bitline is proposed to reduce area cost.