Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

Abstract Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiO x thin-films in a sandwich stack Cu/Si(Cu)O x /Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC) power from 2 W to 15 W. We characterized electrical switching behavior by a Keithley 4200 semiconductor analyzer. Cu/Si(Cu)O x /Pt devices with Cu-doping at DC-sputtering 2 W exhibit the best switching performance showing reproducible forming-free and non-polar switching. The endurance is more than 10 2  cycles, electrical resistance ratio more than 10, and operating voltages as low as: ± 0.75 V for SET and ± 0.45 V for RESET. The switching mechanism of Cu/Si(Cu)O x /Pt stacks is explained based on both filamentary conduction and diffusion of Cu ions/atoms in SiO x . Both ‘temperature coefficient of electrical resistance’ and ‘bonding status’ at different depth-profiles as analyzed by using X-ray photoelectron spectroscopy provide robust evidences of the mechanisms. Cu-doped amorphous SiO x thin-films are thus potential for resistive memory.