Manganese ion implanted ultrananocrystalline diamond films: Optical and electrical characterization

We report the optical and electrical properties of high-dose (1015–1017 ions/cm2) Mn-ion implanted ultrananocrystalline diamond (Mn-UNCD) films. Mn-ion implantation and post-annealing of UNCD films lead to the formation of Mn-related color centers, characterized in Mn-UNCD films by their zero phonon line emissions at 621.2 nm and phonon sidebands at 611.2 nm and 630.3 nm. Raman spectra of Mn-UNCD films indicated amorphization via high-dose Mn-ion implantation and that the annealing process results in graphitization of the films. The Mn-UNCD film implanted with the Mn-ion dose of 1017 ions/cm2 exhibits a conductivity of 122.25 (Ω cm)−1, as well as enhanced field electron emission (FEE) properties such as a turn-on field of 10.67 V/μm and a FEE current density of 0.85 mA/cm2.We report the optical and electrical properties of high-dose (1015–1017 ions/cm2) Mn-ion implanted ultrananocrystalline diamond (Mn-UNCD) films. Mn-ion implantation and post-annealing of UNCD films lead to the formation of Mn-related color centers, characterized in Mn-UNCD films by their zero phonon line emissions at 621.2 nm and phonon sidebands at 611.2 nm and 630.3 nm. Raman spectra of Mn-UNCD films indicated amorphization via high-dose Mn-ion implantation and that the annealing process results in graphitization of the films. The Mn-UNCD film implanted with the Mn-ion dose of 1017 ions/cm2 exhibits a conductivity of 122.25 (Ω cm)−1, as well as enhanced field electron emission (FEE) properties such as a turn-on field of 10.67 V/μm and a FEE current density of 0.85 mA/cm2.