Fringing capacitance and parasitic resistance dependant characteristics of fully overlapped lightly doped drain MOSFET

An analytical fringing capacitance and parasitic resistance dependant model of fully overlapped lightly doped drain (FOLD) MOSFET is presented. Considering outer and inner fringing capacitances and the depletion of the n surface caused by the normal electric field from the gate, I d -V d characteristics, transconductance, drain conductance, channel resistance, cut-off frequency and transit time are evaluated.