COMPUTER SIMULATION OF TRANSIENT PROCESSES IN DFB SEMICONDUCTOR LASERS

Transient processes of semiconductor laser were simulated. These processes are best described by the variations of injected electron density and emitted photon density. Rate equations were chosen to describe the transient processes. Using the described model of transient processes, the unknown parameters of DFB (distributed feedback) semiconductor laser were dened from the experimental characteristics: the coefcient of optical amplication fi, the factor of spontaneous emission fl, the electron and photon lifetime, and the form of injection current pulse. The parameter estimation technique, which allows to dene laser parameter values simply, quickly, and fairly precisely, was suggested. Transient processes were simulated for several DFB lasers and the coincidence of calculation results with experimental ones for all lasers was sufcient. The usable physical model was improved. Transient processes of lasers were simulated again and more precise results were obtained. The mismatch of analysed laser parameters with experimental ones did not exceed the limit of 10%.