Old Web
English
Sign In
Acemap
>
Paper
>
Low Temperature (250℃) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange
Low Temperature (250℃) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange
2016
Ryota Yoshimine
Kaoru Toko
Takashi Suemasu
Keywords:
Amorphous solid
Thin film
Crystallization
Crystallography
Materials science
Insulator (electricity)
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]