Effect of deposition temperature on field emission property of carbon thin film grown by PECVD

Using RF plasma enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field electron emission of these films were examined at a function of deposition temperature. It was found that the electron emission current of the sample prepared at deposition temperature above was considerably improved. The film grown at deposition temperature of had the best threshold field of 8 V/ in this experiment. According to the results of Raman spectroscopy. growth of graphite crystallites was promoted with higher deposition temperatures. Moreover the surface morphology was abruptly changed at deposition temperature above . We discuss the field electron emission characteristics of amorphous carbon films with regard to the structural feature and surface morphology.