Effects of external magnetic field on the effective g factor of (Ga,Mn)As
2008
With the help of time resolved magneto-optic Kerr rotation measurements, the optically induced spin precession in heavily doped diluted magnetic semiconductor Ga 0.937 Mn 0.063 As was observed. It was found that the effective g factor increases with increasing magnetic field, which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. Those free holes will couple with the localized magnetic ions by p-d interactions, leading to the formation of spontaneous magnetization in Ga 0.937 Mn 0.063 As, which in turn to the enhancement of the effective g factor.
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