The dielectric properties for (Nb,In,B) co-doped rutile TiO2 ceramics

Abstract Recently, colossal permittivities (~10 5 ) and low loss factors ( 2 ceramics, which have attracted considerable attention. In this work, (Nb,In,B) co-doped rutile TiO 2 ceramics were investigated for achieving temperature- and frequency- stable dielectric properties in TiO 2 based colossal dielectric ceramics. The (Nb,In,B) co-doped rutile TiO 2 ceramics were prepared by conventional solid-state reaction method. The microstructures, dielectric properties and complex impedance of 1 mol.% (Nb+In) co-doped rutile TiO 2 (TINO) and xwt% B 2 O 3 (x=0.5, 1, 2 and 4) doped TINO were systematically investigated and compared. It was found that by doping B 2 O 3 the sintering temperature of TINO ceramics can be reduced by 100 °C. Meanwhile, the dielectric loss of TINO ceramics was decreased by doping B 2 O 3 . In the 2 wt% B 2 O 3 doped TINO ceramics, the dielectric permittivity kept a high value of >2.0×10 5 and the dielectric loss was lower than 0.1 in a frequency range of 10 2 −10 5  Hz and a temperature range of 25–200 °C.