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2D physics-based compact model for channel length modulation in lightly doped DG FETs
2D physics-based compact model for channel length modulation in lightly doped DG FETs
2009
Weidemann
Kloes
Schwarz
Iñiguez
Keywords:
Conformal map
Logic gate
Physics
Doping
Electric potential
Differential equation
Poisson's equation
Channel length modulation
Field-effect transistor
Condensed matter physics
Correction
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