A 15.5mΩcm 2 -680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing

Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm 2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The demonstrated on-resistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low R on Q gd of 1.8 OmeganC and high avalanche current of 175 A/cm 2