About the Cu-related green luminescence band in ZnO

2009 
Cu-related green luminescence (GL) band in n-type ZnO layers grown by molecular beam epitaxy on sapphire and a bulk ZnO sample grown by hydrothermal method have been studied with above-bandgap excitation. Annealing of the samples in air at temperatures above 600°C resulted in an increase in the concentration of CuZn acceptors, followed by a dramatic enhancement of the Cu-related GL band peaking at 2.45eV, and a characteristic fine structure. The GL band quenched at temperatures between 250 and 500K due to escape of holes from the excited state of the CuZn acceptor to the valence band. Energy position of this state in the bandgap of ZnO and its capture cross section for holes were estimated as 0.38eV and 2×10−13cm2, respectively.
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