Anti-control of chaos in p–Ge photoconductor

We present a scheme for the anti-control of chaos in the p–Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this p–Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p–Ge system gradually evolves to fully developed chaotic states.