High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs

Trench lateral power MOSFETs (TLPMs) are suitable for one chip power ICs due to its low specific on- resistance and ease of fabrication with CDMOS devices. In our smart power IC process we integrated both the high side n- channel and bidirectional TLPMs in one chip. In addition, better device characteristics of both devices were obtained with the process integration technology. The high side MOSFET shows 20 mOmegamm 2 specific on-resistance with 25 V breakdown voltage and excellent reliability. The bidirectional MOSFET shows 7.0 mOmegamm 2 specific on-resistance, which represents 67% of the current mass production value, with a breakdown voltage of 25 V.