Graphical modelling of carbon nanotube field effect transistor

Carbon nanotube Field Effect Transistors (CNTFET) are found to be one of the most promising successors to conventional Si-MOSFET. This paper presents a novel modelling for planar CNTFET based on curve fitting method. The results obtained from the model are compared with the simulated results obtained by using the nanohub simulator. Finally the accuracy of the model is discussed by calculating the normalized root mean square difference between the nanohub simulation results and those obtained from the proposed model.