Simulation study of new 3-terminal devices for high speed STT-RAM

To improve the performance of spin transfer torque random access memory(STT-RAM),especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal device.The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.