Old Web
English
Sign In
Acemap
>
Paper
>
Electrical and Recombination Properties of Copper-Silicide Precipitates in Silicon.
Electrical and Recombination Properties of Copper-Silicide Precipitates in Silicon.
2010
Andrei A. Istratov
Henrik Hedemann
Michael Seibt
Oleg Vyvenko
W. Schroeter
Thomas Heiser
C. Flink
H. Hieslmair
Eicke R. Weber
Keywords:
Inorganic chemistry
Copper
Copper silicide
Silicon
Chemistry
Precipitation (chemistry)
Recombination
Correction
Source
Cite
Save
Machine Reading By IdeaReader
1
References
0
Citations
NaN
KQI
[]