Formation of Buried Layers by Laser Radiation

New conception and both experimental anid theoretical results regarding buried layers formation and control of their depth anid thickness are presented. Effect of the CO 2 laser radiation on distribution and state of oxygen or nitrogen atoms, implanted in silicon wafer, is investigated experimentally. A model is proposed and equations are obtained descrbing the process of buried layer's foruation from impurities, introduced inside the crystal, in presence of the temperature gradient. An interaction between impurities is taken into account.