ROLEOFOXIDE/NITRIDE INTERFACE TRAPSONTHENANOCRYSTAL MEMORY CHARACTERISTICS

Inthis workweareaddressing thethreshold voltage instability observed innonvolatile nanocrystal memories (NCMs)during the retention experiments underconstant applied bias. Suchinstability derives fromthecharge motion attheoxide/nitride interface traps of theOxide/Nitride/Oxide stack employed ascontrol dielectric. We alsoinvestigated theimpact oftemperature onthecell retention properties, showing important andoriginal results thatcouldbe attributed tothestructure ofthecontrol dielectric stack.