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(100)及び(110)基板上のeSiGeによる歪みSiチャネルを有するMetal/High-k Gate Stack MOSFETのデバイス特性( IEDM(先端CMOSデバイス・プロセス技術))
(100)及び(110)基板上のeSiGeによる歪みSiチャネルを有するMetal/High-k Gate Stack MOSFETのデバイス特性( IEDM(先端CMOSデバイス・プロセス技術))
2007
hassyuu kokorozasi tatesita
syun ri ou
kaori nagano
tomoyuki heiya
hayaki miya nami
tetuya ikuta
toyotaka kataoka
zenmei kikuti
sinpei yamaguti
takasi andou
kaori tai
ryousuke matumoto
han fuzita
tigusa yamane
akira yamamoto
saori kanda
katu takasi kugimiya
tadayuki kimura
tomo wa daiti
yuuiti yamamoto
yosihiko nagahama
kenya hagimoto
sei wakabayasi
yukio tagawa
masanori tukamoto
hayato iwamoto
masaki saitou
singo kadomura
naoki nagasima
Keywords:
High-κ dielectric
Machine learning
Artificial intelligence
Computer science
Tin
Electronic engineering
gate stack
Pattern recognition
Electrical engineering
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