CMOS magnetic sensor with MAGFET

Split drain MAGFET is a special kind of MOSFET that can be used as a Hall sensor to measure magnetic fields. The sensitivity of a MAGFET depends on geometric parameters and bias conditions. In this paper several different structures of MAGFET including rectangular and sectoral shapes in two and four lobes, each with different sizing have been designed and fabricated in a standard CMOS 0.18/μm technology. The measurement results on different samples show that among all the shapes, the sectoral structure with two 90° lobes has the most sensitivity with respect to the magnetic field.