Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask

J. Van Olmen,A. Al-Bayati,Gerald Beyer,P. Boelen,L. Carbonell,Kelvin Chan,Ivan Ciofi,Martine Claes,A. Cockburn,G. Druais,Dirk Hendrickx,Nancy Heylen,E Kesters,S Lytle,Kavita Shah,Maaike Op de Beeck,Herbert Struyf,Zs. Tokei,J. Versluijs,Chao Zhao,Atif Noori

Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask

2008

In this paper we describe the successful integration of 50nm half pitch single damascene copper trenches in BD II (k=2.5) low-k dielectric on 300mm wafers, focusing on integration issues encountered during development.

Keywords:

Diamond
Materials science
Copper interconnect
Immersion lithography
Copper
Dielectric
Wafer
Multiple patterning
Composite material
Metal
Optoelectronics

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