Processing bulk silicon with femtosecond laser pulses at 2-µm wavelength (Conference Presentation)

We investigate the possibilities offered by tightly focused ultrashort laser pulses at 2-µm wavelength for modifying the bulk of silicon. Results show that the lower the pulse duration, the lower the probability to modify the material, in good agreement with nonlinear propagation simulations. By evaluating the influence of several laser parameters, we have found ideal conditions for successfully initiating modifications systematically in the bulk of silicon with ultrashort laser pulses through plane surface for the first time. This result holds promises for contactless monolithic integration of three-dimensional architectures inside silicon.