Structure and ferroelectric property of low concentration iron-doped sol–gel BaTiO3 thin films

Abstract BaTi 1− x Fe x O 3 (0.0≤ x ≤0.02) thin films were prepared on Pt/Ti/SiO 2 /(100)Si substrates via the sol–gel process, and the effect of Fe substitution on the structure and properties was studied. A detailed structure analysis performed by X-ray diffraction (XRD) and Raman spectra confirmed that the tetragonality of BaTi 1− x Fe x O 3 thin films decreased as the Fe content increased. Temperature-dependent Raman spectra in conjunction with temperature-dependent dielectric measurements revealed the coexistence of two different ordering structures in the BaTi 1− x Fe x O 3 films for x =0.01, and the film exhibited enhanced ferroelectric properties with a remnant polarization P r of 13.8 μC/cm 2 . Changes in the ferroelectric properties due to variations in the Fe content were attributed to structural differences in the films.