Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

This work determines the noise characterization of Indium Arsenide (InAs) based Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMTs) with different gate dielectrics for high-frequency applications. The physical TCAD simulator tool is used to characterize the noise performance of the device architecture using different dielectrics. Here, the effective oxide thickness (EOT) is fixed at 1.5 nm and the noise parameters are analyzed for each dielectric. The proposed device with Aluminium Oxide (Al2O3) as gate dielectric achieved a high cut-off frequency (fT) of 730 GHz and frequency of maximum oscillation (fmax) of 840 GHz at a drain-source voltage of Vds = 0.5 V. Moreover, double gate MOSHEMTs with Al2O3 gate dielectric material has the minimum noise figure (NFmin) of 1.5 dB observed at Vgs = 0.6 V and Vds = 0.5 V. The low noise level output over a wide bandwidth and high-frequency efficiency obtained has increased the feasibility of the device to be used in broadband applications in the design of lower noise amplifiers (LNA).