Extraction of J–V, G/ω–V–f and C–V–f Characteristics for p-Type Silicon/Intrinsic Ultrananocrystalline Diamond/n-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes

The production of p-type silicon/intrinsic ultrananocrystalline diamond/n-type nanocrystalline iron disilicide heterojunction devices was conducted via coaxial arc plasma deposition and pulsed laser deposition. The results of current density-voltage (J-V) curves justified a large leakage current along with minimal response under illumination. A recombination process controls the mechanism for carrier portage in the zone of V