Atomic diffusion of boron and other constituents in amorphous Si–B–C–N

Abstract The self-diffusion of boron is studied between 1550 and 1700 °C in polymer-derived amorphous solids of composition Si 3 BC 4.3 N 2 . Ion implanted stable 10 B isotopes are used as tracers and secondary ion mass spectrometry for depth profiling. The experimentally determined diffusivities obey an Arrhenius behavior with a high activation enthalpy of Δ H  = (7.3 ± 1.3) eV and a high pre-exponential factor of D 0  = 1.6 m 2 /s. The results are discussed in relation to the diffusivities of the other constituents (Si, C, N) and possible diffusion mechanism are suggested.