Role of Ga3+/Ti 4+ induced defects on UV sensing applications of Zn0.96875 (GaxTi 1-x) 0.03125 O

The simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits fast and slow response and recovery. Ga3+ incorporation enhances the photocurrent drastically as revealed from UV sensing behavior. The higher sensitivity is achieved for of (Ga/Ti) co-doped samples due to the increase in oxygen interstitials defects.