Characterisation of a large area silicon photomultiplier

This paper illustrates the definition and the measurement methods of the main silicon photomultiplier (SiPM) features, such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, after-pulse probability. Moreover, several methods for the measurement of the breakdown voltage $V_{BD}$ from the current-voltage $IV$ curve, such as the "relative derivative", the "inverse relative derivative", the "second derivative", the "third derivative" and the `IV model" are compared. These methods are applied to a very large area monolithic device: the hexagonal SiPM S10943-2832(X) device, of area (1 cm$^2$), which has been developed in collaboration with Hamamatsu. We describe the measurements of the performance at room temperature of this device.