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Acemap > Paper > Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation

Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation

2013 
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