100 keV 10-B+ implantation into poly-(di-n-hexyl silane), (PDHSi)

100 keV10B+ ions were implanted into poly-(di-n-hexyl silane) in different directions at a fluence of 1×1014 cm-2, and their depth distribution was determined by means of the neutron depth profiling technique. In no case were the projectile ions found to come to rest according to their predicted range profiles. Instead, they are always found to undergo considerable long-range migration. During the irradiation process this motion appears to be radiation-enhanced, and during the subsequent annealing steps one appears to deal with regular thermal diffusion. The implant redistribution is always found to be governed strongly by the self-created damage, insofar as both electronic and nuclear defects in the polymer act as trapping centers. Their population ratio is modified by thermal annealing.