Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy

Preliminary experimental results and analysis of photoluminescence (PL) measurements performed on GaAs heteroepitaxial films, which have been grown on Si(100) substrates by atomic hydrogen-assisted low-temperature molecular beam epitaxy technique have been presented and discussed. The results have also been compared with those obtained for GaAs homoepitaxial films. Furthermore, minority carrier lifetimes in n-GaAs on Si have been characterized by the PL decay method and an average lifetime of as high as 8.0 ns has been successfully obtained, which is the highest value ever reported to date.