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InAlAs/InGaAs HBTs with simultaneously high values of Ft and Fmax for mixed analog/digital applicati
InAlAs/InGaAs HBTs with simultaneously high values of Ft and Fmax for mixed analog/digital applicati
2001
Y. Betser
D. Scott
D. Mensa
S. Jaganathan
T. Mathew
Mark J. W. Rodwell
Keywords:
Electronic engineering
Chemistry
Digital electronics
Bipolar junction transistor
Electrical engineering
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