Діркові стани в сферичних квантових наногетероситемах з проміжною спін-орбітальною взаємодією

The hole energy spectrum has been studied for the spherical semiconductor nanoheterosystem with the cubic symmetry.  The exact solutions of the Schrodinger equation for the ground and excited hole states are presented within the framework of the 6-band Luttinger Hamiltonian and the finite gap of bands with the corresponding boundary conditions. Dependence of the holes energies from the radius of the quantum dot has been calculated for the GaAs/AlAs heterostructure. Obtained results where compared with data obtained using the infinite potential well model, as well as the single-band model for heavy and light holes.