Defect Passivation by Selenium-Ion Implantation for Poly-Si Thin Film Transistors

Low-dose (10 13 cm -2 ) selenium-ion implantation prior to pulsed-excimer-laser crystallization is investigated as a low-thermal-budget defect-passivation technique for polycrystalline silicon TFTs. Selenium defect passivation is found to be effective for improving TFT performance and for providing superior TFT reliability as compared with hydrogenation. Ion implantation, passivation, polycrystalline silicon (poly-Si), selenium (Se), thin-film transistor (TFT).