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Approaches to Reduced-Defect Active Regions for III-N Devices
Approaches to Reduced-Defect Active Regions for III-N Devices
2006
Charles R. Eddy
Michael Mastro
Nabil Bassim
M. E. Twigg
Richard L. Henry
R.T. Holm
James C. Culbertson
Orest J. Glembocki
Joshua D. Caldwell
P. G. Neudeck
Andrew J. Trunek
J. Anthony Powell
Martin C. Peckerar
Yves Ngu
Feng Yan
Sachidananda Babu
Keywords:
Materials science
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