General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

Near-term commercialization of nanowire-based devices is possible through an integrative approach with existing semiconductor platforms. Research-based single nanowire devices suffer from issues related to size dependence and variability; hence, the use of a large number of nanowires in parallel is a prerequisite for real-world devices to scale output and provide statistical averaging of properties. Parallel integration is most directly achieved through electrical contacting of nanowire arrays in the as-grown vertical configuration. Here, we demonstrate a one-step process that overcomes several technological barriers simultaneously, allowing the seamless electrical integration of ZnO nanowire arrays with industry standard silicon substrates. Our seamless integration process is based on the deposition of a metal contact layer on silicon and subsequent CVD nanowire growth. Combined SEM, XRD, and TEM measurements show compositional and structural changes to each metal contact layer candidate during the high-...