Memory and threshold resistive switching in BiFeO3 thin films using NiO as a buffer layer

Abstract BiFeO 3 and BiFeO 3 /NiO thin films have been deposited on Pt/Ti/SiO 2 /Si substrates by sol–gel method. Compared with bare BiFeO 3 thin films, an improvement of memory resistive switching characteristic, such as the dispersion of switching voltages and resistances, has been clearly observed in BiFeO 3 thin films using NiO as a buffer layer. Moreover, threshold resistive switching has also been demonstrated in BiFeO 3 /NiO thin films, but no observation in BiFeO 3 thin films. Then, the role of thin NiO layer on memory resistive switching stabilization and threshold resistive switching is discussed.