Direct beam lead bonding for trench MOSFET & CSTBT

The next innovation in the power modules has come up with the corroboration between the power chip technology like CSTBT and die packaging technology like the direct transfer mold module, via wireless bonding technology, that is our technology "direct beam lead bonding (DBLB)". In this paper, we report the electrical characteristics and the reliabilities of a MOSFET and a CSTBT using DBLB. The DBLB type MOSFETs on-state resistance (R/sub DS(GN)/) can be reduced in 16% comparing with die conventional aluminum (Al) wire bonding type and an avalanche ruggedness (E/sub AVA/) during undamped inductive switching (UIS) is unproved approximately 2 times. It has the excellent reliability under the thermal cycling test between 233K and 398K during over 3000 cycles. Further, the DBLB type CSTBT has, under the short circuit safety operation area (SCSOA) test condition, 11% greater toughness as energy than the Al wiring type.