Local self-heating in short gate GaAs PHEMTs

Self heating in ultrashort gate length GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) is investigated. The experimental results include an original measurement of the average temperature in the gate drain area of the device channel. An original model which accounts for both bidimensional heat transfer and quasi bidimensional energy balance carrier transport is described. Typical simulations in good agreement with the experiments are discussed.