Monolithically integrated coplanar stripline and InAlAs/InGaAs WODFETs with a 4.2-ps switching time and a 3.2-ps delay

Electro-optic and photoconductive sampling have been used in characterization of high-speed electronic devices such as the modulation-doped field-effect transistor (MODFET). In previous work, the devices under test were wire bonded to photoconductive-switch/transmission-line fixtures. To avoid parasitics introduced by bond wires, it is desirable to monolithically integrate the device under test with the fixture. In this paper we report electro-optic measurement of a high-speed MODFET monolithically integrated with a photoconductive switch and coplanar stripline fixture.