Design of Doherty power amplifier for base-station application

2016 
This paper expounds on the design of Doherty power amplifier. The principle of Doherty power amplifier is analyzed detailedly. We also introduce the procedure of designing matching networks. A Doherty power amplifier at band 2.11–2.17GHz is simulated with the MRF8S21120H transistor. The P1dB is above 52dBm, and its efficiency is above 41% in 6dB back-off region. It demonstrates an efficiency improvement of 12.1% at 6dB back-off point. And the upper IMD3 is −36.4dBc, the lower IMD3 is −36dBc, at 6.5dB back-off point. It has an acceptable linearity.
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