Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO2-Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation: Implications for Flat-Panel Displays

Dou-Dou Liang,Bin-jie Chen,Bin Feng,Yuichi Ikuhara,Hai Jun Cho,Hiromichi Ohta

Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO2-Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation: Implications for Flat-Panel Displays

2020

Dou-Dou Liang
Bin-jie Chen
Bin Feng
Yuichi Ikuhara
Hai Jun Cho
Hiromichi Ohta

Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, amorphous (a-) SnO2...

Keywords:

Optoelectronics
Seebeck coefficient
Thin-film transistor
Transistor
Modulation
Backplane
Amorphous solid
Materials science
Nanometre
Electric field

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