Radiation hardened 256K CMOS SOI SRAM

A radiation hardened 256K-bit asynchronous SRAM is presented. It is fabricated by a 0.5-micron, radiation hardened CMOS PDSOI process with 3 layers of metal. It features 800uA stand-by current, 42ns access time, 300K rad(Si) total dose tolerant and 1.5×10 11 rad (Si)/s dose rate survivability. A 28-pin DIP package is used. The circuit operates with ambient temperature from −55 to +125°C and power supply from 4.5 to 5.5V.