ANNEALING BEHAVIOR AND ATOMIC COMPOSITION OF SUBSTITUTIONAL CARBON-OXYGEN COMPLEXES IN SILICON CRYSTALS

We investigated the annealing behavior of the infrared‐absorption peaks at 1052 and 1099 cm−1 due to C–OB complex, and those at 1112 and 1026 cm−1 due to C–OC complex. Similar to previous observations [Y. Shirakawa, H. Yamada‐Kaneta, and H. Mori, J. Appl. Phys. 77, 41 (1995)], the formation‐dissociation reaction of C–OB and C–OC complexes rapidly reaches the quasithermal‐equilibrium state at the onset of annealing. Based upon the mass action law, it is suggested that the formation of the C–OB and C–OC complexes involves one carbon atom and two and three oxygen atoms, respectively.