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Acemap > Paper > Nanoscale Post-Breakdown Conduction of $hboxHfO_2/hboxSiO_2$ MOS Gate Stacks Studied by Enhanced-CAFM

Nanoscale Post-Breakdown Conduction of $hboxHfO_2/hboxSiO_2$ MOS Gate Stacks Studied by Enhanced-CAFM

2005 
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