Matrix effect-free depth profiling of implanted Mg in AlxGa1-xAs/GaAs multi-layers by resonance enhanced multiphoton laser post-ionization sputtered neutral mass spectrometry

In a present device technology, the controlled nanometer-sized semiconductor structures making technology and the evaluation approach are indispensable. Secondary ion mass spectrometry is one of the useful techniques for such an evaluation, but it also has the problem to evaluate samples required nanometer-sized depth resolution quantitatively because of “matrix effect” in the near-surface and interfacial regions. Resonance-enhanced multiphoton ionization sputtered neutral mass spectrometry (REMPI-SNMS) is one of the promising methods to reduce the influence of the matrix effects. As compared with CsMg+ detection, SNMS is more useful to evaluate the real depth profile of the dopant, Mg in AlxGa1-xAs/GaAs system. Copyright © 2012 John Wiley & Sons, Ltd.