Predicting mask performance by numerical simulation

In this paper, we present a method for linking a finite element Maxwell's equation solver with a scalar lithography simulator, iPHOTO-II. The combined simulator takes the mask topography and the stepper parameters as input and simulates the resist profile on the wafer plane. The accuracy of the simulator is demonstrated by comparing simulation results with experimental data over a wide range of focus, exposure and mask dimensions. The simulator is used to predict the performance of a phase edge phase shift mask. It is revealed that the true position of the line center in a phase edge PSM is shifted slightly from the location given by geometric projection. Biasing rules for compensating for this location shift are presented.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.