Low-power, High Speed and High Uniform Switching in AIOx-based Memristor using Homogeneous Bilayer Structure for Memcomputing

High-performance memristor is greatly desired to develop memcomputing. Here, we report a W/AlO x /Al 2 O 3 /Pt memristor based on oxygen vacancy filament engineering. The oxygen-rich AlO x film fabricated by sputtering (RF) severs as oxygen vacancy (Vo) reservoir with low oxygen chemical potential and high mobility, whereas the denser AI 2 O 3 film deposited by atomic layer deposition (ALD) acts as a dominant resistive switching (RS) layer. Our device, which satisfies promising characteristics for data storage and memcomputing, displays low-power, high-uniformity, large on/off ratio, high-speed and high-temperature stability at 125 °C.